UI9600 Transistor Thermal Sensitive Parameter Selector

UI9600 Transistor Thermal Sensitive Parameter Selector measurement: • Parameters measured at ambient temperature (25°C ±5°C): 1) Current gain β (0-99) 2) Switching time T (0.01μs-99.9μs), including rise time (Tr), storage time (Ts), fall time (Tf) 3) Collector-emitter saturation voltage VCES (0-2V), base-emitter voltage VBE (0-2V) 4) Collector cut-off current ICEO (0.01μA-99.9mA) 5) Collector-emitter breakdown voltage BVCEO (50V-650V) • Thermal-sensitive parameters measured at elevated temperature: VBE, β, ICEO • This transistor test instrument compares measurement results for VBE, β, and ICEO obtained at normal and elevated temperatures; when parameter drift exceeds preset tolerance limits, the selector activates visual/audible alarms to identify non-conforming components • Classification capability: Divides transistors into groups based on T and β characteristics; displays group number and triggers alarms when measured values of VBE, β, or ICEO exceed established limits, indicating specific failure modes • Configurable test conditions: A. β testing: Base current Ib; three programmable Ib settings: 0.1mA, 1mA, 10mA B. Switching time testing: Collector current Ic; four programmable Ic settings: 0.5A, 0.25A, 0.1A, 0.05A; with corresponding base currents: 0.1A, 0.05A, 0.02A, 0.01A C. Transistor heating parameters: 1) Heating voltage: 5-20V continuously adjustable 2) Heating current: 0.05-2A continuously adjustable 3) Heating duration: 0-9.9s continuously adjustable • Memory function: Threshold values and limit parameters are user-programmable with non-volatile storage; instrument retains 20 distinct test profiles; select appropriate profile during operation • Display interface: Simultaneous measurement values displayed across four digital readouts with clear visibility; supports data printing for documentation. Tags: Transistor Thermal Sensitive Parameter Selector, UI9600, IEC 60747-1, transistor reliability testing, thermal parameter drift analysis